17.5 per cent p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact.
(29/05/2013)
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (200 degrees C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type...
Tác giả: Wang, T. H.; Page, M. R.; Iwaniczko, E.; Wang, Q.; Xu, T.; Yan, Y.; Roybal, L.; Levi, D.; Bauer, R.; Branz, H. M.; Yelundur, V.; Rohatgi, A. |
Số trang: 5 |
Lĩnh vực: Vật lý |
Năm XB: 2005 |
Loại tài liệu: Khác
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17.5 per cent p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Co | Số trang: 5
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Thin hThin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (200 degrees C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.ydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (200 degrees C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.
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